@ Bharat Jalan 2016


The hybrid MBE technique (traditionally know as metal organic or organometallic MBE) combines the advantages of the conventional MBE and the metal organic chemical vapor deposition techniques. Below is shown a simple animation illustrating the working principle of the hybrid MBE approach for complex oxide growth in our lab. Email me if you would like a copy of the MBE animation for educational outreach/demonstration purposes.

By employing hybrid molecular beam epitaxy techniques, our research focuses on studying functional oxide materials at nanoscale for the fundamental study and for their applications in energy, communication and information technology. With an ultimate goal to bring complex oxide closer to reality, our objective is to synthesize these materials with improved structural quality and low defects that are now standard for traditional semiconductors for:

  1. Establishing the structure-defect-property relationship and the pathways to defect-managed complex oxides thin films and heterostructures with an ultimate goal to realize high room temperature electron and hole mobility - an ultimate step forward in the direction of oxide electronics and spintronics devices.

  2. Understanding, controlling and exploiting emergent interfacial phenomena at complex oxide interfaces with the goal to couple interfacial properties with the properties of nearby material in a proximal configuration.

  1. Growth of metastable phases and complex layered structures for energy conversion.

  1. Study of defects in materials and their manipulation to tailor material’s properties


Below is shown the hybrid MBE system in our lab, which arrived at UMN in December - 2012 and was fully operational in Feb-2013. A perfect lattice as evidenced by the scanning transmission microscopy image of the SrTiO3 film grown on SrTiO3 substrate attest to the capability of our system to produce highly perfect oxide thin films. 

Figure caption: (Left) Advanced hybrid molecular beam epitaxy system in our lab at UMN; (Right) (a, b) Atomic number sensitive high angle annular dark field (HAADF) image of MBE-grown SrTiO3 film on SrTiO3 substrate, (c - e) Atomic resolution EDX map of SrTiO3 acquired using FEI Titan. Maps were acquired for 100s using Ka signals for all elements. Images were taken in collaboration with Mkhoyan’s group at UMN.